دیتاشیت ATP212-TL-H
مشخصات دیتاشیت
نام دیتاشیت |
ATP212
|
حجم فایل |
347.633
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Discontinued at Digi-Key
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
35A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
23mOhm @ 18A, 10V
-
Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
34.5nC @ 10V
-
Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1820pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
40W (Tc)
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Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
ATPAK
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Package / Case:
ATPAK (2 leads+tab)
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Base Part Number:
ATP212
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detail:
N-Channel 60V 35A (Ta) 40W (Tc) Surface Mount ATPAK